Design and Modelling of Tunnel Field Effect Transistor- using TCAD Modeling

The purpose of this research was to suggest a junction-less strategy for vertical Tunnel Field Effect Transistor, which would increase the device's efficiency. In study, we examine similarities and differences between negative capacitor TFET vertically generated with source pocket heterostructure-based nanowire gate. And how channel transit impacts output qualities sub-100 nanometer sized device. Silvaco TCAD (a commercially available tool) used simulate tri-layer high-K dielectric made hafnium zirconium oxide (HZO) titanium dioxide (TiO2) materials as gate stacking V-TFET GAA-NC-TFET structures, tunnelling transport parameters were calibrated experimentally. A short bandgap material, GaSb, in home region enhance carrier via mentioned three (GaSb)-channel (Si) heterojunction at varying biases utilized. Motion, tube length, saturating velocity are only few characteristics that investigated. As result building's orientation, electric field is enhanced, allowing an ION current up 104 Am2. most unexpected device high ION/IOFF may mobility reduce saturation velocity, perhaps reducing drain voltage saturation. proposed biosensor's sensitivity multiplied by 108 when lateral tandem. We apply variety optimisation strategies deal problem, despite fact quantum confinement reduces effect variations on performance. When biomolecules positively charged, increased, they negatively decreased.